SSV1MUN2211T1
| Manufacturer | Onsemi |
|---|---|
| Manufacturer Model | onsemi-SSV1MUN2211T1 |
| Lot number | 22+ |
| Package | Bulk |
| Part | SSV1MUN2211T1 |
| PRODUCT CATEGORY | Specialized ICs |
| Description | |
| DATASHEET | PDF Datasheet |
The onsemi-SSV1MUN2211T1 is a dual-channel, 2.1 A, 20 V, N-channel MOSFET small signal transistor. It is designed to be used in low voltage and low current applications, such as switching and amplification.
Product parameters:
Manufacturer: onsemi
Part number: SSV1MUN2211T1
Type: N-channel MOSFET small signal transistor
Configuration: Dual-channel
Maximum continuous drain current: 2.1 A
Drain-source voltage (VDS): 20 V
Gate-source voltage (VGS): ± 10 V
Drain-source on-state resistance (RDS(on)): 200 mΩ (max) @ VGS = 4.5 V, ID = 1 A
Input capacitance (Ciss): 275 pF (typ) @ VGS = 0 V, f = 1 MHz
Output capacitance (Coss): 97 pF (typ) @ VDS = 10 V, f = 1 MHz
Reverse transfer capacitance (Crss): 85 pF (typ) @ VDS = 10 V, f = 1 MHz
Package: SOT-563
RoHS compliant: Yes
Product details:
The onsemi-SSV1MUN2211T1 is a dual-channel N-channel MOSFET small signal transistor that is designed to be used in low voltage and low current applications, such as switching and amplification. This device features a maximum continuous drain current of 2.1 A and a drain-source voltage of 20 V.
The SSV1MUN2211T1 also features a low on-state resistance of 200 mΩ at VGS = 4.5 V and ID = 1 A, which allows for efficient power management. The input capacitance of the device is 275 pF at VGS = 0 V and f = 1 MHz, while the output capacitance is 97 pF at VDS = 10 V and f = 1 MHz. The reverse transfer capacitance is 85 pF at VDS = 10 V and f = 1 MHz.
The SSV1MUN2211T1 is packaged in a SOT-563 package, which is a surface-mount package that is designed to be used in applications with limited board space. The package is RoHS compliant, which means that it is free from hazardous substances.
Stock:4376
Minimum Order:1
Looking for a lower wholesale price? Send a quick inquiry and we'll get back to you ASAP!The onsemi-SSV1MUN2211T1 is a dual-channel, 2.1 A, 20 V, N-channel MOSFET small signal transistor. It is designed to be used in low voltage and low current applications, such as switching and amplification.
Product parameters:
Manufacturer: onsemi
Part number: SSV1MUN2211T1
Type: N-channel MOSFET small signal transistor
Configuration: Dual-channel
Maximum continuous drain current: 2.1 A
Drain-source voltage (VDS): 20 V
Gate-source voltage (VGS): ± 10 V
Drain-source on-state resistance (RDS(on)): 200 mΩ (max) @ VGS = 4.5 V, ID = 1 A
Input capacitance (Ciss): 275 pF (typ) @ VGS = 0 V, f = 1 MHz
Output capacitance (Coss): 97 pF (typ) @ VDS = 10 V, f = 1 MHz
Reverse transfer capacitance (Crss): 85 pF (typ) @ VDS = 10 V, f = 1 MHz
Package: SOT-563
RoHS compliant: Yes
Product details:
The onsemi-SSV1MUN2211T1 is a dual-channel N-channel MOSFET small signal transistor that is designed to be used in low voltage and low current applications, such as switching and amplification. This device features a maximum continuous drain current of 2.1 A and a drain-source voltage of 20 V.
The SSV1MUN2211T1 also features a low on-state resistance of 200 mΩ at VGS = 4.5 V and ID = 1 A, which allows for efficient power management. The input capacitance of the device is 275 pF at VGS = 0 V and f = 1 MHz, while the output capacitance is 97 pF at VDS = 10 V and f = 1 MHz. The reverse transfer capacitance is 85 pF at VDS = 10 V and f = 1 MHz.
The SSV1MUN2211T1 is packaged in a SOT-563 package, which is a surface-mount package that is designed to be used in applications with limited board space. The package is RoHS compliant, which means that it is free from hazardous substances.
