SI7792DP-T1-GE3
| Manufacturer | Vishay Siliconix |
|---|---|
| Manufacturer Model | Vishay Siliconix-SI7792DP-T1-GE3 |
| Lot number | 22+ |
| Package | Tape & Reel (TR) |
| Part | SI7792DP-T1-GE3 |
| PRODUCT CATEGORY | transistors-fets-mosfets-single |
| Description | MOSFET N-CH 30V 40.6A/60A PPAK |
| DATASHEET | PDF Datasheet |
The SI7792DP-T1-GE3,from Vishay Siliconix,is transistors-fets-mosfets-singleWhat we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please send a quote to us!
| Typ | Beschreiwung |
|---|---|
| Serie | SkyFET®, TrenchFET® Gen III |
| Package | Tape & Reel (TR) |
| Deel Status | Obsolete |
| fet Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| drain to source voltage (vdss) | 30 V |
| aktuell - kontinuéierlech drain (id) @ 25 ° c | 40.6A (Ta), 60A (Tc) |
| Fuertspannung (max rds on, min rds on) | 4.5V, 10V |
| rds op (max) @ id, vgs | 2.1mOhm @ 20A, 10V |
| vgs(th) (max) @ id | 2.5V @ 250µA |
| Gate charge (qg) (max) @ vgs | 135 nC @ 10 V |
| vgs (max) | ±20V |
| Input Kapazitéit (ciss) (max) @ vds | 4.735 nF @ 15 V |
| fet Fonktioun | Schottky Diode (Body) |
| Energieverbrauch (max) | 6.25W (Ta), 104W (Tc) |
| Betribssystemer Temperatur | -55°C ~ 150°C (TJ) |
| Montéierung Typ | Surface Mount |
| Fournisseur Apparat Package | PowerPAK® SO-8 |
| Package / Fall | PowerPAK® SO-8 |
Stock:55263
Minimum Order:1
Looking for a lower wholesale price? Send a quick inquiry and we'll get back to you ASAP!The SI7792DP-T1-GE3,from Vishay Siliconix,is transistors-fets-mosfets-singleWhat we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please send a quote to us!
| Typ | Beschreiwung |
|---|---|
| Serie | SkyFET®, TrenchFET® Gen III |
| Package | Tape & Reel (TR) |
| Deel Status | Obsolete |
| fet Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| drain to source voltage (vdss) | 30 V |
| aktuell - kontinuéierlech drain (id) @ 25 ° c | 40.6A (Ta), 60A (Tc) |
| Fuertspannung (max rds on, min rds on) | 4.5V, 10V |
| rds op (max) @ id, vgs | 2.1mOhm @ 20A, 10V |
| vgs(th) (max) @ id | 2.5V @ 250µA |
| Gate charge (qg) (max) @ vgs | 135 nC @ 10 V |
| vgs (max) | ±20V |
| Input Kapazitéit (ciss) (max) @ vds | 4.735 nF @ 15 V |
| fet Fonktioun | Schottky Diode (Body) |
| Energieverbrauch (max) | 6.25W (Ta), 104W (Tc) |
| Betribssystemer Temperatur | -55°C ~ 150°C (TJ) |
| Montéierung Typ | Surface Mount |
| Fournisseur Apparat Package | PowerPAK® SO-8 |
| Package / Fall | PowerPAK® SO-8 |
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