TPCA8109(TE12L1,V
Toshiba Semiconductor and Storage
| Manufacturer | Toshiba Semiconductor and Storage |
|---|---|
| Manufacturer Model | Toshiba Semiconductor and Storage-TPCA8109(TE12L1,V |
| Lot number | 22+ |
| Package | Tape & Reel (TR) |
| Part | TPCA8109(TE12L1,V |
| PRODUCT CATEGORY | transistors-fets-mosfets-single |
| Description | MOSFET P-CH 30V 24A 8SOP |
| DATASHEET | PDF Datasheet |
Mfr：Toshiba Semiconductor and Storage
Series：U-MOSVI
Package：Tape & Reel (TR)
Product Status：Active
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：24A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs：56 nC @ 10 V
Vgs (Max)：+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta), 30W (Tc)
Operating Temperature：150°C
Mounting Type：Surface Mount
Supplier Device Package：8-SOP Advance (5x5)
Package / Case：8-PowerVDFN
Base Product Number：TPCA8109
Stock:55430
Minimum Order:1
Looking for a lower wholesale price? Send a quick inquiry and we'll get back to you ASAP!Mfr：Toshiba Semiconductor and Storage
Series：U-MOSVI
Package：Tape & Reel (TR)
Product Status：Active
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：24A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs：56 nC @ 10 V
Vgs (Max)：+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta), 30W (Tc)
Operating Temperature：150°C
Mounting Type：Surface Mount
Supplier Device Package：8-SOP Advance (5x5)
Package / Case：8-PowerVDFN
Base Product Number：TPCA8109
