IRFB42N20DPBF
| Manufacturer | Rochester Electronics, LLC |
|---|---|
| Manufacturer Model | Rochester Electronics, LLC-IRFB42N20DPBF |
| Lot number | 22+ |
| Package | Bulk |
| Part | IRFB42N20DPBF |
| PRODUCT CATEGORY | transistors-fets-mosfets-single |
| Description | IRFB42N20 - 12V-300V N-CHANNEL P |
| DATASHEET | PDF Datasheet |
Series：HEXFET®
Package：Bulk
Product Status：Active
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：55mOhm @ 26A, 10V
Vgs(th) (Max) @ Id：5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：140 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：3430 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.4W (Ta), 330W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3
Stock:55482
Minimum Order:1
Looking for a lower wholesale price? Send a quick inquiry and we'll get back to you ASAP!Series：HEXFET®
Package：Bulk
Product Status：Active
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：55mOhm @ 26A, 10V
Vgs(th) (Max) @ Id：5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：140 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：3430 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.4W (Ta), 330W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3
