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FDN5618P_G

Onsemi


ManufacturerOnsemi
Manufacturer Modelonsemi-FDN5618P_G
Lot number22+
PackageBulk
PartFDN5618P_G
PRODUCT CATEGORYtransistors-fets-mosfets-single
DescriptionMOSFET P-CH 60V 1.25A SUPERSOT3
DATASHEETPDF Datasheet

Authentication
The FDN5618P_G,from Onsemi,is transistors-fets-mosfets-singleWhat we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please send a quote to us!
SERIESPOWERTRENCH®
PackageBulk
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C1.25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs170mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.8 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds430 pF @ 30 V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3
Base Product NumberFDN561


The FDN5618P_G,from Onsemi,is transistors-fets-mosfets-singleWhat we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please send a quote to us!
SERIESPOWERTRENCH®
PackageBulk
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C1.25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs170mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.8 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds430 pF @ 30 V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3
Base Product NumberFDN561


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