IRF8113TRPBF-1
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer Model | Infineon Technologies-IRF8113TRPBF-1 |
| Lot number | 22+ |
| Package | Tape & Reel (TR) |
| Part | IRF8113TRPBF-1 |
| PRODUCT CATEGORY | transistors-fets-mosfets-single |
| Description | MOSFET N-CH 30V 17.2A 8SO |
| DATASHEET | PDF Datasheet |
Mfr：Infineon Technologies
Series：HEXFET®
Package：Tape & Reel (TR)
Product Status：Obsolete
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：17.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.6mOhm @ 17.2A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2910 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)
Stock:55391
Minimum Order:1
Looking for a lower wholesale price? Send a quick inquiry and we'll get back to you ASAP!Mfr：Infineon Technologies
Series：HEXFET®
Package：Tape & Reel (TR)
Product Status：Obsolete
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：17.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.6mOhm @ 17.2A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2910 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)
